New Product
Si4104DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
10
1
150 °C
25 °C
0.5
0.4
0.3
I D = 5 A
0.1
0.01
0.001
0.2
0.1
0.0
125 °C
25 °C
0.00
0.2
0.4
0.6
0. 8
1.0
1.2
5
6
7
8
9
10
0. 8
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
100
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
0.5
8 0
0.2
- 0.1
60
- 0.4
- 0.7
- 1.0
- 1.3
I D = 5 mA
I D = 250 μA
40
20
0
- 50
- 25
0
25
50
75
100
125
150
0 . 0 0 1
0.01
0.1
1
1 0
T J - Temperat u re (°C)
Threshold Voltage
100
10
1
0.1
Limited b y R DS(on) *
T A = 25 °C
Single P u lse
Time (s)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1s
10 s
www.vishay.com
4
0.01
0.1
DC
1 10 100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 69936
S09-0764-Rev. B, 04-May-09
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